Current density

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Current density is a measure of the density of flow of a conserved charge. Usually the charge is the electric charge, in which case the associated current density is the electric current per unit area of cross section, but the term current density can also be applied to other conserved quantities. It is defined as a vector whose magnitude is the current per cross-sectional area.

In SI units, the electric current density is measured in amperes per square metre.

Contents

Definition

Electric current is a coarse, average quantity that tells what is happening in an entire wire. The distribution of flow of charge is described by the current density:

\boldsymbol{J}(\boldsymbol r ,\ t)=qn(\boldsymbol r ,\ t)\boldsymbol{v}_d (\boldsymbol r , \ t)=\rho (\boldsymbol r , \ t) \boldsymbol{v}_d (\boldsymbol r , \ t)\

where

J(r, t) is the current density vector at location r at time t (SI unit amperes per square metre)
n(r, t) is the particle density in count per volume at location r at time t (SI unit m-3)
q \!\ is the charge of the individual particles with density n (SI unit coulombs)
ρ(r, t) = q n (r, t) is the charge density (SI unit coulombs per cubic metre)
vd(r, t) is the particles' average drift velocity at position r at time t (SI unit metres per second)

Importance

Current density is important to the design of electrical and electronic systems.

Circuit performance depends strongly upon the designed current level, and the current density then is determined by the dimensions of the conducting elements. For example, as integrated circuits are reduced in size, despite the lower current demanded by smaller devices, there is trend toward higher current densities to achieve higher device numbers in ever smaller chip areas. See Moore's law.

At high frequencies, current density can increase because the conducting region in a wire becomes confined near its surface, the so-called skin effect.

High current densities have undesirable consequences. Most electrical conductors have a finite, positive resistance, making them dissipate power in the form of heat. The current density must be kept sufficiently low to prevent the conductor from melting or burning up, or the insulating material failing. At high current densities the material forming the interconnections actually moves, a phenomena called electromigration. In superconductors excessive current density may generate a strong enough magnetic field to cause spontaneous loss of the superconductive property.

The analysis and observation of current density also is used to probe the physics underlying the nature of solids, including not only metals, but also semiconductors and insulators. An elaborate theoretical formalism has developed to explain many fundamental observations.12

The current density is an important parameter in Ampère's circuital law (one of Maxwell's equations), which relates current density to magnetic field.

Approximate calculation of current density

A common approximation to the current density assumes the current simply is proportional to the electric field, as expressed by:

\boldsymbol{J}= \sigma \boldsymbol{E}

where

\boldsymbol{E} is the electric field strength and
σ is the electrical conductivity.

Conductivity σ is the reciprocal (inverse) of electrical resistivity and has the SI units of siemens per metre (S·m-1), and E has the SI units of newtons per coulomb (N C−1) or, equivalently, volts per metre (V m−1).

A more fundamental approach to calculation of current density is based upon:

\boldsymbol J (\boldsymbol r,\ t) =  \int_{-\infty}^t dt' \int d^3 \boldsymbol{r'} \  \sigma (\boldsymbol{r-r'},\ t-t') \boldsymbol E (\boldsymbol{r'},\ t')\ ,

indicating the lag in response by the time dependence of σ, and the non-local nature of response to the field by the spatial dependence of σ, both calculated in principle from an underlying microscopic analysis, for example, in the case of small enough fields, the linear response function for the conductive behavior in the material. See, for example, Giuliani or Rammer.34 The integral extends over the entire past history up to the present time.

As some reflection might indicate, the above conductivity and its associate current density reflect the fundamental mechanisms underlying charge transport in the medium, both in time and over distance.

A Fourier transform in space and time then results in:

\boldsymbol J(\boldsymbol k ,\ \omega) = \sigma (\boldsymbol k , \ \omega)\boldsymbol E (\boldsymbol k ,\ \omega)\ ,

where σ(k, ω) is now a complex function.

It should be noted that in many materials, for example, in crystalline materials, the conductivity is a tensor, and the current is not necessarily in the same direction as the applied field. Aside from the material properties themselves, the application of magnetic fields can alter conductive behavior.

Current through a surface

The current through a surface S can be calculated using a surface integral:

I=\int_S{  \mathbf{J} \cdot \mathrm{d}\mathbf{A}}

where the current is in fact the integral of the dot product of the current density vector and the differential surface element \mathrm{d} \mathbf{A} \ , in other words, the net flux of the current density vector field flowing through the surface S.

Continuity equation

Main article: Continuity equation

Because charge is conserved, the net flow out of a chosen volume must equal the net change in charge held inside the volume:

\int_S{ \mathbf{J} \cdot \mathrm{d}\mathbf{A}} = -\frac{\mathrm{d}}{\mathrm{d}t} \int_V{\rho \; \mathrm{d}V} = - \int_V{\left( \frac{\partial \rho}{\partial t} \right) \mathrm{d}V}\ ,

where ρ is the charge density per unit volume, and dA is a surface element of the surface S enclosing the volume V. The surface integral on the left expresses the current outflow from the volume, and the negatively signed volume integral on the right expresses the decrease in the total charge inside the volume. From the divergence theorem,

\int_S{ \mathbf{J} \cdot \mathrm{d}\mathbf{A}} = \int_V{(\mathbf{\nabla} \cdot \mathbf{J}) \mathrm{d}V}\ .

Hence:

\int_V{(\mathbf{\nabla} \cdot \mathbf{J}) \mathrm{d}V}\ = - \int_V{\left( \frac{\partial \rho}{\partial t} \right) \mathrm{d}V}\ .

Because this relation is valid for any volume, no matter how small, no matter where located:

\nabla \cdot \mathbf{J} = - \frac{\partial \rho}{\partial t}\ ,

which is called the continuity equation.56

In practice

  • In the domain of electrical wiring (isolated copper), maximum current density can vary from 4A/mm2 for a wire isolated from free air to 6A/mm2 for a wire at free air. If the wire is carrying high frequency currents (above 100kHz) the skin effect may affect the distribution of the current across the section by concentrating the current on the surface of the conductor.
  • In the domain of printed board, for TOP and BOTTOM layers, maximum current density can be as high as 35A/mm2 with a copper thickness of 35µm. Inner layers cannot dissipate as much power as outer layers, thus it is not a good idea to put high power lines in inner layers.
  • In the domain of semiconductor, The maximum current density is given by the manufacturer. But a common average is 1mA/µm (180nm technology) (Ampere per width of the line). Above the maximum current density apart joule effect, some other effects like electromigration appears in the micrometer scale.
  • In biological systems, ion channels regulate the flow of ions (for example, sodium, calcium, potassium) across the membrane in all cells. Current density is measured in pA/pF (picoamperes per picofarad), that is, current divided by capacitance.
  • In gas discharge lamps, such as flash lamps, current density plays an important roll in the output spectrum produced. Low current densities produce spectral line emission and tend to favor longer wavelengths. High current densities produce continuum emission and tend to favor shorter wavelengths.7 Low current densities for flash lamps are generally around 1000A/cm2. High current densities can be more than 4000A/cm2.8

References

External links

See also

Stub

Wikipedia content modification information:

  • This page was last modified on 29 November 2008, at 22:40.

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